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FDD8447L 40V N-Channel PowerTrench(R) MOSFET
January 2007
FDD8447L 40V N-Channel PowerTrench(R) MOSFET
40V, 54A, 8.5m Features General Description
This N-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Max rDS(on) = 8.5m at VGS = 10V, ID = 14A Max rDS(on) = 11m at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant
Application
Inverter Power Supplies
D
G S
D
G
D O -2 52 T -PA K (TO -252)
S
MOSFET Maximum Ratings TC = 25C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Continuous Drain Current @ TC = 25C @ TA = 25C Pulsed Drain-Source Avalanche Energy Power Dissipation @ TC = 25C @ TA = 25C @ TA = 25C Operating and Storage Junction Temperature Range (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 3) (Note 1a) (Note 1b) Ratings 40 20 54 21 100 153 45 3.8 1.6 -55 to +150 C W mJ A Units V V
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) (Note 1b) 2.8 40 96 C/W
Package Marking and Ordering Information
Device Marking FDD8447L Device FDD8447L Package D-PAK(TO-252)
1
Reel Size 13''
Tape Width 12mm
Quantity 2500 units
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(c)2007 Fairchild Semiconductor Corporation FDD8447L Rev.C
FDD8447L 40V N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 32V, VGS = 0V VGS = 20V, VGS = 0V 40 35 1 100 V mV/C A nA
On Characteristics (Note 2)
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A VGS = 10V, ID = 14A, TJ=125C VDS = 5V, ID = 14A 1 1.9 -5 7 8.5 10.4 58 8.5 11 14 S m 3 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 1970 250 150 1.27 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge, VGS = 10V Total Gate Charge, VGS = 5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD =20V, ID = 14A VGS = 10V VDD = 20V, ID = 1A VGS = 10V, RGEN = 6 12 12 38 9 37 20 6 7 21 21 61 18 52 28 nC nC ns ns ns ns nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 14A (Note 2) 0.8 22 11 1.2 V ns nC IF = 14A, di/dt = 100A/s
Notes: 1: RJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a. 40C/W when mounted on a 1 in2 pad of 2 oz copper b. 96C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Maximun current is calculated as: P D --------------r DS ( on ) where PD is maximum power dissipation at TC = 25C and rDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A. 4: Starting TJ = 25C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
FDD8447L Rev.C
2
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FDD8447L 40V N-Channel PowerTrench(R) MOSFET
Typical Characteristics
100
VGS = 10V
3
4.0V
NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V
ID, DRAIN CURRENT (A)
80
2.6 2.2 1.8
3.5V
6.0V 5.0V
4.5V
60
3.5V 40
1.4 1 0.6
4.0V
4.5V
20
5.0V
6.0V
10.0V
3.0V
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5
0
20
40 60 ID, DRAIN CURRENT (A)
80
100
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.02
1.6 NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.4
rDS(ON), ON-RESISTANCE (OHM)
ID = 14A VGS = 10V
ID = 7A 0.0175 0.015 TA = 125 C 0.0125 0.01 0.0075 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
o
1.2
1
0.8
TA = 25 C
o
0.6 -50
-25
0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C)
125
150
Figure 3. On-Resistance Variation with Temperature
100
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
1000 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
VGS = 0V
100 10 1 0.1 0.01 0.001 0.0001
ID, DRAIN CURRENT (A)
80
60
TA = 125oC 25 C -55oC
o
40
TA = 125 C
o
-55 C
o
20
25 C
o
0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5
0
0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD8447L Rev.C
3
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FDD8447L 40V N-Channel PowerTr
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
3000
ID = 14A VDS = 10V 30V
8
2500 CAPACITANCE (pF) 2000 1500 1000
Coss
f = 1MHz VGS = 0 V
6
20V
Ciss
4
2
500 0
0 10 20 Qg, GATE CHARGE (nC) 30 40
0
Crss
0
10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 7. Gate Charge Characteristics
1000 100s 1ms 10 DC VGS = 10V SINGLE PULSE o RJA = 96 C/W TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
o
Figure 8. Capacitance Characteristics
100 P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE RJA = 96C/W TA = 25C
ID, DRAIN CURRENT (A)
100
RDS(ON) LIMIT 10ms 1s 100ms
80
60
1
40
0.1
20
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
100 I(AS), AVALANCHE CURRENT (A)
100
I(pk), PEAK TRANSIENT CURRENT (A)
80
SINGLE PULSE RJA = 96C/W TA = 25C
TJ = 25 C
o
60
10
40
20
0 0.0001
1
0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000
0.1
1 tAV, TIME IN AVANCHE(ms)
10
Figure 11. Single Pulse Maximum Peak Current
Figure 12. Unclamped Inductive Switching Capability
FDD8447L Rev.C
4
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FDD8447L 40V N-Channel PowerTrench(R) MOSFET
Typical Characteristics
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 96C/W
0.1
0.1 0.05 0.02
P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1
0.01
0.01 SINGLE
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD8447L Rev.C
5
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FDD8447L 40V N-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22 FDD8447L Rev.C 6 www.fairchildsemi.com

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